1. Reverse Voltage (Vr): STTH102RL is rated at 200V, while EGP10B is rated at 100V. In circuits where the operating voltage is close to or exceeds 100V, EGP10B may experience breakdown failure due to insufficient voltage margin. 2. Reverse Recovery Time (trr): STTH102RL has a trr of 20ns, compared to 50ns for EGP10B. The slower recovery of EGP10B leads to higher switching losses and increased EMI noise in high‑frequency switching applications, such as SMPS rectification, compromising efficiency and reliability. 3. Reverse Leakage Current (Ir): At their respective rated Vr, EGP10B exhibits a significantly higher leakage current (5µA) than STTH102RL (1µA). This results in greater static power dissipation under high voltage for EGP10B, making it unsuitable for high‑temperature or low‑power‑sensitive circuits. 4. Junction Temperature Range: STTH102RL supports a maximum junction temperature of 175°C, superior to EGP10B’s 150°C. The former offers better thermal reliability margin in high‑temperature environments or under high‑power conditions. In summary, the critical differences lie in voltage withstand capability and high‑frequency performance. EGP10B is only suitable for lower‑voltage, lower‑frequency applications. Direct substitution requires re‑evaluation of circuit safety margins and thermal design.