Original Part
Bipolar (BJT) Transistor PNP 60 V 3 A 250MHz 1.25 W Surface Mount SOT-23-3

Alternative Part
Bipolar (BJT) Transistor PNP 60 V 2 A 100MHz 460 mW Surface Mount SOT-23-3 (TO-236)

Substitution Feasibility Conclusion
Conditional substitution may be considered in specific low-current, low-power, and non-high-frequency scenarios, but a redesign margin review is required. Direct drop-in replacement is not recommended.
Comparison Points
1. Current and Power Capability
ZXTP25060BFHTA: Ic = 3 A, Pd = 1.25 W
NSV60200LT1G: Ic = 2 A, Pd = 0.46 W
The latter requires strict limitation of current and thermal dissipation in continuous or switching applications, potentially necessitating derating or enhanced heat sinking.
2. Saturation Voltage Characteristics
ZXTP25060BFHTA: Vce(sat) = 235 mV @ 3 A
NSV60200LT1G: Vce(sat) = 220 mV @ 2 A
Although the NSV shows a lower value, it is measured at a lower test current. In actual high-current operation (e.g., above 2 A), the ZXTP may exhibit lower conduction loss due to process optimization.
3. DC Gain and Frequency Response
ZXTP: hFE(min) = 100 @ 10 mA, fT = 250 MHz
NSV: hFE(min) = 150 @ 500 mA, fT = 100 MHz
The NSV offers higher drive efficiency in the medium-current range, whereas the ZXTP has significantly better high-frequency performance, making it more suitable for applications requiring fast switching.
4. Leakage Current and Temperature Characteristics
ZXTP: ICBO = 50 nA
NSV: ICBO = 100 nA
The higher cutoff leakage current of the NSV may affect power consumption and stability in the off-state, especially in high-temperature or high-precision circuits.
Recommendation: If the original circuit operates at ≤1.5 A, ≤400 mW, and has no high-frequency requirements, substitution can be attempted with validation of temperature rise and dynamic response. For applications such as switching power supplies or motor drives, the original part is preferred.
Analysis ID: 2F4E-C2D6000
Based on part parameters and for reference only. Not to be used for procurement or production.
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