1. Forward Voltage (Vf): The ST part is rated at 770 mV, while the onsemi part is rated at 850 mV (both @ 10 A). The ST device offers lower conduction loss, reduced heat generation at the same operating current, and consequently higher overall efficiency. 2. Reverse Leakage Current: The ST part specifies 4.5 µA, compared to 150 µA for the onsemi part (both @ 100 V). The onsemi device exhibits significantly higher static power dissipation at elevated temperatures, which may affect thermal stability in high‑temperature environments and requires careful evaluation of the thermal design. 3. Temperature Range Specification: onsemi explicitly specifies the full operating temperature range (–65 °C to 175 °C), whereas ST only indicates the maximum junction temperature. This suggests onsemi may provide clearer performance guarantees for extreme low‑temperature applications, though practical differences are generally limited. 4. Series Characteristics: The onsemi device belongs to the SWITCHMODE™ optimized series, which may offer slight optimizations in switching frequency behavior. Detailed dynamic parameter curves should be consulted to confirm actual performance.