1. Saturation Voltage (Vce(sat)): PBSS303NX is 220mV @ 5.1A, while 2SCR542PT100 is 400mV @ 2A. The former exhibits significantly lower conduction loss at equivalent currents, making it more suitable for high-efficiency, high-current switching applications and helping to reduce heat generation. 2. DC Current Gain (hFE) Test Conditions: PBSS303NX specifies hFE ≥ 250 tested at 2A/2V, whereas 2SCR542PT100 specifies hFE ≥ 200 tested at 500mA/2V. The PBSS303NX offers superior gain characteristics at higher currents under more stringent test conditions, translating to stronger drive capability in practical applications. It is better suited for scenarios requiring higher current amplification. 3. Cut-off Current (ICBO): PBSS303NX has a maximum of 100nA, compared to 1µA for the 2SCR542PT100. The latter's leakage current is an order of magnitude higher, which may introduce additional leakage power loss or thermal stability risks in high-temperature or low-power-sensitive designs. 4. Frequency Characteristic (fT): The 2SCR542PT100's 250MHz is higher than the PBSS303NX's 130MHz. This gives the former an advantage in high-frequency switching or amplification applications, though practical circuit validation is necessary as package and parasitic parameters may limit realized performance. 5. Reliability Certification: The PBSS303NX is AEC-Q100 certified and marked "Automotive Grade." The 2SCR542PT100 lacks this designation. The former meets automotive electronic reliability standards, providing greater assurance in harsh environments involving temperature cycling and vibration. The latter is limited to industrial or consumer-grade applications. 6. Price & Manufacturer: The PBSS303NX is slightly lower in cost and from Nexperia (a specialist in discrete devices), potentially offering advantages in supply chain and cost. Rohm's devices (like the 2SCR542PT100) often feature strengths in analog integration.