1. Reverse leakage current (Ir): The CDBA360LR-HF (500 µA) exhibits a leakage current ten times higher than that of the SK36SMA-3G (50 µA). Under elevated temperature or high reverse voltage conditions, the static power dissipation of the CDBA360LR-HF increases significantly, which may impact system efficiency and temperature rise. This is particularly critical in applications with limited thermal design margin and should be thoroughly validated. 2. Junction capacitance (Cj): The CDBA360LR-HF specifies a junction capacitance of 250 pF (@4V, 1MHz), while this parameter is not provided for the SK36SMA-3G. A higher junction capacitance leads to increased switching losses at high frequencies, potentially limiting performance in switching power supplies (e.g., >100 kHz) or high-speed rectification circuits. Losses and thermal rise should be evaluated based on the actual switching frequency. 3. Process and reliability differences: The notable disparity in reverse leakage current typically reflects variations in semiconductor material and process control, which may affect long-term reliability and parameter consistency—especially under temperature cycling or high-temperature operating conditions. Recommendation: If the application operates at low frequency, ambient temperature, and is not sensitive to leakage current, substitution is feasible. For use in high-temperature, high-frequency, or high-efficiency power circuits, it is recommended to perform actual measurements to assess thermal performance and switching losses.