1. Forward Voltage Drop (Vf) - STPS30H100CW: 800 mV @ 15A - 30CPQ100: 860 mV @ 15A - The ST device exhibits lower conduction loss and reduced heat generation, contributing to improved system efficiency and greater thermal design margin. 2. Reverse Leakage Current (Ir) - STPS30H100CW: 5 µA @ 100V - 30CPQ100: 550 µA @ 100V - The ST part reduces leakage current by two orders of magnitude, significantly lowering static power dissipation and offering better high-temperature stability. This likely results from more advanced Schottky barrier technology or improved junction termination design. 3. Operating Junction Temperature Range - STPS30H100CW: -40°C to 175°C - 30CPQ100: -55°C to 175°C - The Vishay device supports a lower startup temperature, making it suitable for extreme cold environments (e.g., aerospace, specialized industrial applications). The ST variant meets the requirements of the vast majority of industrial and consumer applications. 4. Potential Process & Reliability Differences - The lower Vf and Ir of the ST device typically indicate the use of a newer generation silicon process or trench Schottky structure, which may lead to better performance in reliability tests such as High Temperature Reverse Bias (HTRB). Nevertheless, detailed reliability reports from the manufacturer should be consulted for confirmation.