1. Reverse Leakage Current (Ir@Vr): The typical value for MBRF20100CTG is 150 µA, over 40 times that of STPS20S100CFP (3.5 µA). Under high‑temperature or high‑reverse‑voltage operating conditions, the ONsemi part exhibits significantly higher static power dissipation, which may lead to additional junction temperature rise, affecting overall system efficiency and high‑temperature reliability. This difference typically stems from variations in chip fabrication processes, such as barrier metal composition and epitaxial layer doping. 2. Series Positioning and Recovery Characteristics: MBRF20100CTG belongs to the “SWITCHMODE™” series, optimized for switching power supplies. Although both parts are rated with comparable nominal recovery times, the ONsemi device likely offers advantages in dynamic parameters such as reverse‑recovery softness and Qrr, which help reduce high‑frequency switching noise and EMI. The ST part is a general‑purpose Schottky design, and its dynamic performance is expected to be at a standard level. 3. Price and Cost‑Effectiveness: The unit price of MBRF20100CTG is approximately 3.3 times that of STPS20S100CFP. The higher cost of the ONsemi device may be partly attributed to its switching‑optimized characteristics and brand premium. If high‑frequency performance is not required, choosing the ONsemi part will significantly increase BOM cost with poor cost‑effectiveness. The ST device offers a clear cost advantage while meeting basic electrical specifications.