1. Reverse Recovery Time (trr): The Vishay part (200 ns) outperforms the onsemi part (300 ns). In circuits with higher switching frequencies, the Vishay device may yield marginally lower switching losses and electromagnetic interference (EMI), offering a slight efficiency advantage. For most line-frequency or medium-to-low frequency switching applications, however, this difference has no practical impact. 2. Operating Temperature Range: The onsemi part has a lower junction temperature limit of -65°C, compared to -50°C for the Vishay part. This constitutes the primary limiting difference. If the application environment (e.g., aerospace, outdoor equipment in frigid regions) or circuit startup conditions could cause the junction temperature to fall below -50°C, the Vishay part must not be used as a substitute. For commercial or industrial-grade typical applications, this difference is negligible. 3. Parameter Completeness: Vishay provides junction capacitance data (12pF @ 4V, 1MHz), which is not specified in the onsemi datasheet. The Vishay datasheet is more comprehensive. This parameter is relevant for evaluating rectification performance at very high frequencies or in RF applications. Given the nominal "fast-recovery" speed and for typical applications, this capacitance value is already relatively low, and no significant performance difference between the two parts is anticipated.