1. Performance and Architecture: The ISSI device is a 200 MHz high-speed standard synchronous SRAM (3.1 ns access time), whereas the Renesas part is a 125 MHz (8 ns) ZBT architecture SRAM. Substitution will result in an approximate 37.5% reduction in peak bandwidth. Additionally, the host controller must be verified to support the ZBT (Zero Bus Turnaround) protocol; otherwise, read/write timing mismatch may occur. 2. Operating Temperature Range: The ISSI component supports an industrial temperature range (-40 °C to 85 °C), while the Renesas device is rated only for commercial temperature (0 °C to 70 °C). The substitute cannot be used in harsh environments such as outdoor, industrial, or automotive applications. 3. Package Details: Both devices share the same outline dimensions (13 × 15) and ball count (165). However, ISSI uses a TFBGA package, whereas Renesas employs a CABGA. This primarily relates to differences in solder ball material (lead‑free) and possibly the substrate of the package body. While generally compatible, under high‑reliability or extreme thermal cycling conditions, solder joint fatigue life should be evaluated. 4. Cost and Positioning: The ISSI part is significantly higher in price, reflecting its higher‑speed and wider‑temperature‑range performance positioning. The Renesas device targets cost‑sensitive commercial applications with relaxed performance requirements. Substitution trades performance for cost, and this trade‑off must be evaluated at the system level.