1. Reverse Leakage Current (Ir @ Vr): The NTSB30U100CTG (675 µA) exhibits approximately 35% higher leakage compared to the VB30100C-E3/4W (500 µA). Under extreme conditions—specifically at maximum junction temperature (150°C) and maximum reverse voltage (100V)—the ON Semiconductor device will have slightly higher static power dissipation. This may have a minor negative impact on overall system efficiency at high temperatures and on temperature rise, which should be evaluated against stringent thermal design margins. 2. Technology Platform/Series: The VB30100C belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) platform. This technology utilizes a trench structure to achieve a better balance between forward voltage drop (VF) and reverse leakage current (Ir) for a given die area. The NTSB30U100CTG does not specify a special platform and likely employs a more conventional planar Schottky or similarly optimized structure. This accounts for the difference in leakage current parameter and suggests that, under non-extreme operating conditions, the Vishay device may offer marginally better overall conduction and switching loss performance.