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Original Part

Bipolar (BJT) Transistor NPN 60 V 3 A 200MHz 1 W Surface Mount SOT-89-3

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Alternative Part

Bipolar (BJT) Transistor NPN 60 V 3 A 200MHz 2 W Surface Mount MPT3

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Substitution Feasibility Conclusion

In most medium-power switching or linear amplification applications, the 2SC5824T100R can serve as a replacement for the DXT651-13. However, key differences must be evaluated for the specific application, particularly under high/low temperature conditions or in precision drive scenarios, where careful verification is recommended.

Comparison Points

1. Maximum Power Dissipation (2W vs 1W): The 2SC5824T100R offers twice the power handling capability, providing better thermal reliability under the same operating conditions or allowing for reduced heatsink design margin. 2. Saturation Voltage Vce(sat) (500mV@2A vs 600mV@3A): The former is measured at a lower test current. At the full rated current of 3A, its saturation voltage may approach or even exceed that of the latter. Switching loss and temperature rise should be evaluated based on actual operating current. 3. DC Current Gain hFE (180@100mA vs 100@500mA): The 2SC5824T100R exhibits higher gain at lower currents, but its gain may drop more sharply at higher currents (e.g., >500mA). When substituting, verify whether the drive current requirement at the actual operating point changes. 4. Cutoff Current ICBO (1µA vs 100nA): The former has leakage current one order of magnitude higher, which may introduce additional static power consumption or stability risks in high-temperature or high-reverse-voltage applications. 5. Operating Temperature Range (Tj=150°C only vs -55°C~150°C): The 2SC5824T100R does not specify a lower temperature limit. If the application involves low-temperature environments (e.g., -55°C), its low-temperature performance must be confirmed to ensure suitability.
Analysis ID: F176-4047000
Based on part parameters and for reference only. Not to be used for procurement or production.
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