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Original Part

N-Channel 100 V 57A (Tc) 110W (Tc) Through Hole TO-220-3

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Alternative Part

N-Channel 100 V 43A (Tc) 71W (Tc) Through Hole PG-TO220-3

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Substitution Feasibility Conclusion

In most hard-switching applications such as medium- and low-voltage switching power supplies and motor drives, the IPP180N10N3GXKSA1 can serve as a high-performance replacement for the FDP150N10, particularly when efficiency and switching speed are prioritized. However, in linear or low-frequency applications demanding peak continuous current or high dissipation power, careful thermal design evaluation is required before substitution.

Comparison Points

1. Switching Performance & Drive Requirements Difference: The gate charge (Qg: 25 nC) and input capacitance (Ciss: 1800 pF) of the IPP180N10N3GXKSA1 are significantly lower than those of the FDP150N10 (Qg: 69 nC, Ciss: 4760 pF). Implication: The Infineon device switches much faster with lower switching losses, which helps improve system efficiency, especially at higher frequencies. It also demands less drive current, simplifying gate drive circuit design and reducing drive losses. 2. Conduction Characteristics & Current Capability Difference: The FDP150N10 features a lower on-resistance (Rds(on): 15 mΩ vs. 18 mΩ) and a higher rated continuous drain current (Id: 57 A vs. 43 A). Implication: The Onsemi device exhibits slightly lower conduction loss at the same current level. Its higher current rating suggests a larger die size or a process more optimized for steady-state conduction, giving it a theoretical advantage in continuous high-current scenarios. 3. Thermal Performance & Power Handling Difference: The FDP150N10 has a higher maximum power dissipation (110 W) than the IPP180N10N3GXKSA1 (71 W), but the latter has a higher maximum junction temperature (Tj: 175°C vs. 150°C). Implication: The Onsemi device can handle more power under ideal cooling conditions. The Infineon device allows for higher internal operating temperatures, potentially offering greater design margin during transient thermal overloads or in thermally constrained environments. 4. Technology Platform & Design Focus Difference: The IPP180N10N3GXKSA1 is based on Infineon's OptiMOS™ technology, typically optimized for low Qg and low Rds(on). The FDP150N10 utilizes Onsemi's PowerTrench® technology. Implication: This reflects different design philosophies. OptiMOS™ is characterized by an excellent switching figure-of-merit (FOM = Rds(on) × Qg) and is often the preferred choice for modern high-efficiency switch-mode power supplies. In this specific case, PowerTrench® appears to strike a different balance between conduction capability and thermal performance. 5. Price Difference: The unit price of the IPP180N10N3GXKSA1 ($1.15) is substantially lower than that of the FDP150N10 ($3.41). Implication: Substitution can lead to significant bill-of-materials cost reduction, provided the performance meets the application requirements.
Analysis ID: DD4E-C9C7000
Based on part parameters and for reference only. Not to be used for procurement or production.
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