Original Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)
Alternative Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
1. IS61WV25616BLL-10BI-TR Substitution Conclusion
From a functional and performance perspective, this part can serve as a direct substitute for the original component. It offers identical key specifications: memory capacity (4Mbit), organization (256K x 16), critical timing (access/write cycle time of 10ns), and a compatible supply voltage range (3V – 3.6V, which falls within its own 2.4V – 3.6V range). This ensures direct compatibility in electrical interface and read/write speed.
The core discrepancy lies in the package. The original part uses a 48-CABGA (9x9) package, whereas the substitute is a 48-TFBGA (6x8). The physical dimensions and ball map of these two packages are almost certainly different. Consequently, they are not pin-to-pin compatible, and a PCB layout redesign is mandatory for substitution.
2. IS64WV25616BLL-10BLA3 Substitution Conclusion
The substitution feasibility conclusion for this part is identical to that for the IS61WV25616BLL-10BI-TR. Its key electrical parameters (capacity, architecture, speed) are a complete match for the original component. Furthermore, its operating voltage range (2.4V – 3.6V) is wider, offering downward compatibility with the original part's 3.3V supply, which is an advantage.
However, the decisive limitation is again the package mismatch. It utilizes a 48-TFBGA (6x8) package, which is fundamentally different in physical size and pinout from the original's 48-CABGA (9x9). This makes a direct drop-in replacement impossible without modifying the board design.
Analysis ID: CA87-63D4000
Based on part parameters and for reference only. Not to be used for procurement or production.
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