Original Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)
Alternative Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
1. IS61WV25616BLL-10BLI Substitution Conclusion
This device is a fully functional substitute for the original part in terms of core electrical performance (density, organization, and speed). The key differences are twofold. First, it offers a wider operating voltage range (2.4V-3.6V vs. 3.0V-3.6V), giving the ISSI part superior low-voltage compatibility and making it suitable for a broader range of system power environments. The most critical distinction, however, lies in the physical package: the substitute uses a 48-TFBGA (6x8) versus the original's 48-CABGA (9x9). Their ball maps and package outlines are incompatible. Therefore, a direct drop-in, solder-to-solder replacement on an existing PCB designed for the original component is not possible. A board redesign is required.
2. IS61WV25616BLL-10BLI-TR Substitution Conclusion
The substitution conclusion for this device is identical to that of the IS61WV25616BLL-10BLI. The "-TR" suffix typically denotes Tape and Reel packaging for automated assembly; the silicon die, electrical parameters, and package are identical to the non "-TR" version. While it shares the advantage of a wider operating voltage range, it fundamentally faces the same physical package incompatibility issue with the original part. Direct replacement is not feasible, necessitating a board redesign.
Analysis ID: 1D1B-A5F2000
Based on part parameters and for reference only. Not to be used for procurement or production.
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