Original Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)
Alternative Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
1. IS61WV25616BLL-10BLI Substitution Conclusion
From the perspective of core electrical parameters and functionality, the IS61WV25616BLL-10BLI is a viable direct substitute for the original part. The key differences are as follows: it offers a faster access time (10ns vs. 12ns), providing full timing compatibility with superior performance. It also features a wider operating voltage range (2.4V-3.6V vs. 3.0V-3.6V), ensuring good compatibility within the original 3.3V supply design while offering greater tolerance to voltage fluctuations. The most critical limitation lies in the differing package dimensions (48-TFBGA 6x8 vs. 48-CABGA 9x9). Their ball grid array footprints are incompatible, preventing direct soldering onto the PCB pads designed for the original component. A board redesign is therefore mandatory to enable physical replacement.
2. IS61WV25616BLL-10BLI-TR Substitution Conclusion
The substitution conclusion for the IS61WV25616BLL-10BLI-TR is identical to that of the IS61WV25616BLL-10BLI. The "-TR" suffix typically denotes only the Tape and Reel packaging format, intended for automated surface-mount assembly. The die itself, along with its electrical characteristics and package dimensions, is exactly the same as the version without the "-TR" suffix. Consequently, it shares the same excellent electrical compatibility (faster speed, wider voltage range) and faces the same fundamental obstacle: its package outline (48-TFBGA 6x8) does not match the original part (48-CABGA 9x9). Modifications to the PCB design are required prior to use.
Analysis ID: 956B-8244000
Based on part parameters and for reference only. Not to be used for procurement or production.
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