Original Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)
Alternative Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8)
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8)
1. IS62WV25616BLL-55BLI Substitution Conclusion
This part is functionally compatible with the original target device but presents critical performance disparities that preclude its use as a direct substitute. The primary discrepancy lies in the access/write cycle times. The original component is a high-speed grade rated at 10ns, whereas this substitute is a standard 55ns grade. In applications demanding high-speed data access—such as cache memory or real-time signal processing—the substitute will fail to meet system timing requirements, leading to significant performance degradation or functional failure. Furthermore, the original device uses a 9x9mm CABGA package, while the substitute is housed in a 6x8mm TFBGA package. The difference in physical dimensions and ball grid array layout makes direct soldering replacement impossible, necessitating a PCB redesign.
2. IS62WV25616BLL-55BLI-TR Substitution Conclusion
This variant is identical to the IS62WV25616BLL-55BLI in all electrical parameters, functionality, and physical packaging; therefore, the substitution conclusion remains the same: it is not viable. The "-TR" suffix denotes only a Tape and Reel packaging format for automated assembly and does not alter any of the device's technical specifications. The fundamental performance gap (55ns vs. 10ns) and the physical incompatibility between the TFBGA (6x8mm) and the original CABGA (9x9mm) package—including ball layout—persist. Consequently, this part is equally unsuitable for high-speed applications and cannot be used as a physical drop-in replacement.
Analysis ID: 2035-17E6000
Based on part parameters and for reference only. Not to be used for procurement or production.
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