Original Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)
Alternative Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
1. Substitution Conclusion for IS61WV25616BLL-10BLI
This device is a potential substitute for the original part in terms of core functionality and configuration, with an identical 256K x 16 organization, parallel interface, and 4Mbit density. Key differences are as follows: First, it offers superior speed performance. Its access time and write cycle time (10ns) are better than the original's (12ns), ensuring full timing compatibility while enabling faster system response. Second, it features a wider operating voltage range of 2.4V to 3.6V, compared to the original's 3V to 3.6V. This allows reliable operation in 3V systems and provides the possibility for use at lower voltages, resulting in better compatibility. The most critical limitation lies in the package. Its 48-TFBGA (6x8mm) is highly likely incompatible with the original's 48-CABGA (9x9mm) in terms of physical footprint and ball map. Therefore, it is not a drop-in replacement without modifying the PCB layout and design.
2. Substitution Conclusion for IS61WV25616BLL-10BLI-TR
The substitution conclusion for this device is identical to that for the "IS61WV25616BLL-10BLI" above. The "-TR" suffix typically indicates only the Tape and Reel packaging format, which is suited for automated SMT assembly and does not alter any of the device's electrical parameters, performance, or package dimensions. As a substitute, it shares the same advantages and limitations as the non "-TR" version: full functional and timing compatibility with enhanced performance, a wider voltage range, but a package mismatch preventing direct replacement. Selecting the "-TR" version affects only the procurement and production packaging form.
Analysis ID: 037A-D012000
Based on part parameters and for reference only. Not to be used for procurement or production.
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