Original Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 48-CABGA (9x9)
Alternative Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8)
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8)
1. IS62WV25616BLL-55BLI Substitution Conclusion
This device matches the original part in memory density, organization, and interface. However, key differences exist: the access time is significantly slower (55 ns vs. 15 ns), and the package is a 48-TFBGA (6x8) instead of the original 48-CABGA (9x9), which may lead to physical layout and pad incompatibility. The slower access time could cause system instability or performance degradation if the original timing design strictly relies on the 15 ns high-speed performance. While the wider voltage range (2.5V–3.6V) offers better adaptability, the package difference requires prior verification of pinout and PCB layout compatibility. Direct substitution is not recommended unless the system has sufficient timing margin and the package is compatible.
2. IS62WV25616BLL-55BLI-TR Substitution Conclusion
This part is identical in specifications to the IS62WV25616BLL-55BLI (differing only in packaging format, where TR denotes tape-and-reel). Therefore, the substitution conclusion remains the same: its 55 ns access time may not meet the timing requirements of a system originally designed for a 15 ns high-speed SRAM, and the TFBGA vs. CABGA package difference may directly cause soldering compatibility issues. The advantage of a wider voltage range is only a secondary consideration. Direct substitution is not advised. Focused evaluation of timing margin and package compatibility is essential, with PCB redesign or controller timing adjustments required if necessary.
Analysis ID: 823F-EF07000
Based on part parameters and for reference only. Not to be used for procurement or production.
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