Original Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 100 MHz 5 ns 165-CABGA (13x15)

Alternative Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)

1. 71V65603S150BQGI Substitution Conclusion
Feasible and represents a high-performance direct replacement. The two models are identical in core architecture, density (9Mbit), organization (256K x 36), interface (Parallel), voltage range (3.135V~3.465V), and package (165-TBGA), ensuring hardware compatibility and drop-in electrical connectivity. The differences lie in the clock frequency and access time: the 71V65603S150BQGI operates at an increased clock frequency of 150 MHz (compared to 100 MHz for the original part) and features a reduced access time of 3.8 ns (versus 5 ns). This substitution offers higher data throughput and lower read/write latency, which can enhance system real-time performance. If the original system has sufficient timing margin, the replacement will directly yield a performance upgrade. However, it is important to note that if the system design strictly relies on the timing boundaries of the original part, validation of high-speed signal integrity (e.g., clock, data lines) is required to ensure it meets the more stringent timing requirements for reliable operation.
Analysis ID: 8558-2CD3000
Based on part parameters and for reference only. Not to be used for procurement or production.
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