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Original Part

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 100 MHz 5 ns 165-CABGA (13x15)

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Alternative Part

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)

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Substitution Feasibility Conclusion

Provided that electrical and physical interfaces are compatible, the 71V65603S150BQGI8 can be used as a drop‑in replacement for the 71V65603S100BQGI8. The success of the substitution ultimately depends on the target system’s timing margin and signal integrity requirements.

Comparison Points

1. Performance and Timing: The 150‑MHz variant operates at a 50% higher clock frequency than the 100‑MHz part, with a correspondingly shorter access time (3.8 ns vs. 5 ns). This translates to higher data throughput and reduced access latency. While this improves bus wait states for the host (CPU, FPGA, etc.), it imposes tighter constraints on interface timing, such as setup and hold times. 2. Implications for System Design: The higher operating frequency (150 MHz) places more stringent demands on PCB design, including signal integrity, power integrity, and timing alignment. If the original system was optimized for 100 MHz operation, replacing the device with the 150‑MHz version requires careful evaluation of the existing layout—trace lengths, termination schemes, and power‑supply noise—to ensure stable operation at the elevated frequency. Failure to do so may introduce timing violations or bit‑error risks. 3. Power and Thermal Considerations: At the same supply voltage, increased operating frequency typically raises dynamic power consumption. Although static power may remain similar, under high‑load conditions the 150‑MHz device is likely to dissipate more heat. System thermal headroom should be verified accordingly.
Analysis ID: 4579-D541000
Based on part parameters and for reference only. Not to be used for procurement or production.
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