Original Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)
Alternative Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8.5 ns 165-CABGA (13x15)
Substitution Feasibility Conclusion
The 71V65703S85BQI can be downgraded to replace the 71V65603S133BQ, provided that electrical interfaces, packaging, and infrastructure compatibility are satisfied. However, the actual system requirements for speed and temperature must be evaluated. Substitution is acceptable if the system has sufficient timing margin and does not require high-temperature operation. If the system is already operating near performance limits or is intended for room-temperature environments, the replacement may introduce performance risks or unnecessary cost increases.
Comparison Points
1. Performance and Speed Grade: The 71V65603S133BQ has an access time of 4.2 ns and supports a 133 MHz clock. The 71V65703S85BQI has an access time of 8.5 ns, implying support for approximately 117 MHz operation. The substitute device offers significantly lower maximum data transfer bandwidth (roughly 12% reduction), reducing system timing margin. In high-performance or timing-critical systems, this may lead to read/write errors or instability.
2. Operating Temperature Range: The 71V65603S133BQ is specified for commercial temperature range (0°C to 70°C), while the 71V65703S85BQI is rated for industrial temperature range (-40°C to 85°C). The replacement device provides higher reliability under extreme temperatures and broader application suitability. However, if the original design is only intended for indoor ambient conditions, this advantage may not be realized. Additionally, industrial-grade chips typically come at a slightly higher cost.
Analysis ID: D2B7-4249000
Based on part parameters and for reference only. Not to be used for procurement or production.
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