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Original Part

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)

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Alternative Part

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8.5 ns 165-CABGA (13x15)

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Substitution Feasibility Conclusion

Direct substitution of the 71V65703S85BQI for the 71V65603S150BQI is generally not recommended. Significant performance differences may lead to system timing violations or insufficient bandwidth. Substitution may only be considered in non‑critical or down‑clocked applications.

Comparison Points

1. Access Time & Performance Grade: The 71V65603S150BQI features a 3.8 ns access time and supports a 150 MHz clock frequency, qualifying it as a high‑speed synchronous SRAM suitable for high‑bandwidth, low‑latency applications (e.g., network processors or cache memory). In contrast, the 71V65703S85BQI has an 8.5 ns access time, implying a significantly lower operating frequency (estimated in the 50–100 MHz range). This performance downgrade reduces system response speed and may fail to meet the original design's timing margin. 2. Timing Compatibility: The difference in access time directly impacts read/write cycles. In a synchronous interface, the longer access time may require the memory controller to reduce the clock frequency or insert wait states. Failure to adjust timing parameters could result in data errors or system instability. 3. Application Suitability: While both devices share the same package, voltage, and temperature range—ensuring physical compatibility—the performance gap limits substitution to systems with relaxed timing requirements or those where timing can be reconfigured (e.g., low‑power or backup applications).
Analysis ID: 1483-7B7B000
Based on part parameters and for reference only. Not to be used for procurement or production.
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