Original Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 7.5 ns 165-CABGA (13x15)
Alternative Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)
1. 71V65603S150BQG Substitution Conclusion
This device is a direct drop-in replacement for the original 71V65703S75BQG. Both share identical core specifications (9Mbit density, 256K×36 organization, 3.3V supply, 165-TBGA package). However, the new model improves access time from 7.5 ns to 3.8 ns (corresponding to a 150 MHz clock frequency), significantly increasing data throughput. This makes it suitable for higher-performance systems with stricter timing requirements. If the original design already meets timing margin, the substitution can enhance system responsiveness. Note that potential signal integrity issues at higher speeds may require layout adjustments.
2. 71V65603S150BQGI Substitution Conclusion
This device is identical in parameters to the 71V65603S150BQG. The suffix "I" denotes an industrial-grade temperature range (typically -40℃ to +85℃ or wider), whereas the original and non-"I" versions are usually commercial-grade (0℃ to +70℃). The 71V65603S150BQGI offers higher reliability in applications with elevated or fluctuating ambient temperatures, extreme low temperatures, or harsh environments. It can directly replace the original part while extending the operational temperature range. However, verify that other system components support the same temperature specification, and note that industrial-grade devices may carry a slightly higher cost.
Analysis ID: 9CCB-DE7F000
Based on part parameters and for reference only. Not to be used for procurement or production.
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