Original Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8 ns 165-CABGA (13x15)
Alternative Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8.5 ns 165-CABGA (13x15)
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 117 MHz 7.5 ns 165-TFBGA (13x15)
1. Substitution Conclusion for 71V65703S85BQI
This part, a derivative within the same family as the original component (71V65703S80BQ), represents a highly viable substitution. The key difference lies in the access time, which is slightly degraded from 8 ns to 8.5 ns, leading to a marginal theoretical performance reduction under high-frequency operation. However, all core parameters—including density, organization, interface, voltage, and package—are identical. Both devices also support ZBT (Zero Bus Turnaround) synchronous technology. For applications not operating at the extreme limits of timing margin, the 71V65703S85BQI can directly replace the original part, provided the system's timing budget is verified to accommodate the slower speed grade.
2. Substitution Conclusion for IS64LF25636A-7.5B3LA3-TR
This device is compatible with the original part in fundamental parameters such as density, voltage, and package, but features two critical distinctions. First, it offers a faster access time of 7.5 ns, which theoretically enables higher performance. Second, it does not support ZBT technology, functioning instead as a standard synchronous SDR SRAM. This may introduce additional latency cycles during read/write switching, potentially impacting continuous data transfer efficiency. If the original system relies on ZBT for efficient pipelined operations, a direct substitution could lead to protocol mismatches. However, if the system only requires a standard synchronous SRAM and the timing can be adapted, this part can serve as a replacement, though a re-evaluation of the controller configuration and overall bus efficiency is necessary.
Analysis ID: B5AD-3008000
Based on part parameters and for reference only. Not to be used for procurement or production.
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