Original Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8 ns 165-CABGA (13x15)
Alternative Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 7.5 ns 165-CABGA (13x15)
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 117 MHz 7.5 ns 165-TFBGA (13x15)
1. 71V65703S75BQG Substitution Conclusion
This part is a direct upgrade to the original and represents a highly viable substitution. The sole difference is an access time improvement from 8 ns to 7.5 ns, granting the device faster read/write speeds. It maintains complete compatibility with the original in terms of electrical interface, functionality, package, and supply voltage. This change constitutes a positive performance upgrade. It can be directly substituted in the vast majority of applications and may enhance system performance. However, it is necessary to verify that the timing design of the target system can accommodate this faster speed, which is typically the case.
2. IS64LF25636A-7.5B3LA3-TR Substitution Conclusion
Substitution with this device requires careful evaluation. While basic functionality is preserved, a key technical discrepancy exists. The device is specified as "SRAM - Synchronous, SDR" compared to the original's "SRAM - Synchronous, SDR (ZBT)". ZBT (Zero Bus Turnaround) refers to a specific pipelined architecture designed to eliminate idle clocks between read and write cycles. At the same operating frequency as the original, the ISSI part may offer lower sustained data throughput. In applications demanding continuous, high-efficiency data streams (e.g., networking, image processing), this could introduce performance bottlenecks or timing issues. Therefore, it cannot be considered a fully pin-to-pin compatible drop-in replacement. Rigorous validation based on the specific application's data flow patterns is mandatory.
Analysis ID: CC25-D92B000
Based on part parameters and for reference only. Not to be used for procurement or production.
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