Original Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8.5 ns 165-CABGA (13x15)
Alternative Part
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 7.5 ns 165-CABGA (13x15)
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 117 MHz 7.5 ns 165-TFBGA (13x15)
1. 71V65703S75BQG Substitution Conclusion
Direct substitution with performance upgrade. This part is from the same manufacturer and product family as the original (71V65703S85BQG). The key difference is an improved access time, reduced from 8.5 ns to 7.5 ns. The newer device offers faster read/write speeds, thereby increasing system timing margin. This directly enhances system performance or improves timing stability. Both devices are identical in memory architecture, interface, voltage, and package. They are pin-compatible, requiring no modifications to hardware design or software drivers. This makes it an ideal drop-in upgrade.
2. IS64LF25636A-7.5B3LA3-TR Substitution Conclusion
Requires careful evaluation; a functionally similar alternative. This device is compatible with the original in core parameters (density, organization, access time, voltage) and physical package. However, a key technical difference exists: its description is listed as "SRAM - Synchronous, SDR" versus the original's explicit "SDR (ZBT)". It may lack the Zero Bus Turnaround (ZBT) architecture feature. During back-to-back read/write operations, this could introduce additional clock cycle latency, potentially reducing the maximum data throughput efficiency in continuous read/write scenarios. If the original system design relies on ZBT for seamless pipeline operation, this substitution may cause performance degradation or timing violations. For systems with less stringent continuous read/write timing requirements, this part can serve as a functionally and electrically compatible alternative.
Analysis ID: BC06-06DB000
Based on part parameters and for reference only. Not to be used for procurement or production.
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