+86 755 8277 4696
English
Original Part

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8.5 ns 165-CABGA (13x15)

Quote
Alternative Part

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 8 ns 165-CABGA (13x15)

Quote

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 117 MHz 7.5 ns 165-TFBGA (13x15)

Quote
1. 71V65703S80BQI Substitution Conclusion Feasible, serving as a direct upgrade from the same manufacturer. The key difference is a faster access time (8 ns vs. 8.5 ns), providing greater performance margin under identical operating conditions or enabling operation at higher frequencies. Core functionality, timing protocol (ZBT), electrical characteristics, and package are fully compatible, allowing for a pin-to-pin replacement.
2. IS64LF25636A-7.5B3LA3-TR Substitution Conclusion Requires careful evaluation, as it is a potential substitute with similar parameters but a different architecture. Two primary differences exist: first, its access time is shorter (7.5 ns), offering better performance; second, and more critically, its technical description lacks the "ZBT" designation, indicating it is likely a standard synchronous SDR SRAM that does not support the Zero Bus Turnaround (ZBT) protocol. While capacity, voltage, and package are identical, the absence of ZBT means its read/write timing cycles may not be fully compatible with the original part. If the host controller is designed for ZBT timing, direct substitution could lead to system instability or suboptimal performance. Rigorous timing verification is mandatory.
Analysis ID: CD29-5C64000
Based on part parameters and for reference only. Not to be used for procurement or production.
SkyChip © 2026, Email: sales@skychip.com