Original Part
Alternative Part
1. ISP817XDSMT&R Substitution Conclusion
After detailed comparison, the ISP817XDSMT&R is identical to the original ISP817SMT&R in all key electrical parameters, package dimensions, and isolation rating. The only difference lies in the typical values for rise time (4 µs) and fall time (3 µs), which are swapped compared to the original part (3 µs, 4 µs). In extremely high-frequency switching applications, this represents a minor change in signal edge symmetry. However, for the vast majority of mid-to-low frequency applications—such as relay driving or status feedback—this timing parameter swap has no material impact on circuit functionality. For non-ultra-high-speed switching scenarios, the ISP817XDSMT&R can serve as a direct drop-in replacement for the original part without requiring any circuit design modifications.
2. ISP817XCSMT&R Substitution Conclusion
The parameter description for the ISP817XCSMT&R is identical to that of the ISP817XDSMT&R. Its comparison with the original ISP817SMT&R leads to the same conclusion as stated above. The difference is likewise limited to the swapped order of rise/fall times (4 µs, 3 µs) versus the original (3 µs, 4 µs). This discrepancy merely indicates a minor interchange in the slight asymmetry between the turn-on and turn-off speeds of the output transistor. It does not affect core performance characteristics such as basic isolation, current transfer capability, or voltage withstand rating. The ISP817XCSMT&R is also a viable substitute suitable for the majority of the original part's applications. However, in circuits involving precise timing control or nanosecond-level edge requirements, bench verification is recommended.
Analysis ID: 2B04-EFC8000
Based on part parameters and for reference only. Not to be used for procurement or production.
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