1. Current Capability & On-Resistance: The NTMFS is rated for 119A (Tc) with an Rds(on) of 3.5mΩ, which is significantly superior to the FDP's 15A (Tc). At identical current levels, the NTMFS exhibits markedly lower conduction losses, reduced temperature rise, and consequently higher efficiency. This performance gap reflects the underlying technological generation difference (trench/shielded-gate vs. older planar process). 2. Package & Thermal Resistance (The Core Differentiator): The FDP utilizes a TO-220 package, which allows for the attachment of a discrete heatsink and provides a clear thermal path defined by case temperature (Tc). In contrast, the NTMFS employs a DFN package, a surface-mount device whose thermal performance is dominated by the junction-to-ambient thermal resistance (RθJA) and relies on PCB copper for heat dissipation. This necessitates a complete redesign of the thermal management system, shifting from a forced-air/heatsink approach to a design heavily dependent on PCB layer count, copper thickness, and layout. 3. Power Dissipation Capability: The FDP is rated for 310W (Tc), while the NTMFS is rated for 107W (Tc). This disparity does not indicate an inherent weakness in the NTMFS but rather stems from the different thermal conditions underlying their ratings. The FDP's high rating assumes an ideal heatsink maintaining a specific case temperature, whereas the NTMFS rating more accurately reflects the practical upper limit in a typical PCB-mounted application. 4. Drive Characteristics: The NTMFS explicitly specifies low gate charge (Qg=33nC) and input capacitance (Ciss). Combined with its low Rds(on), this confirms it as a modern MOSFET optimized for switching performance, making it suitable for high-frequency applications (e.g., DC-DC converters) where switching losses are critical. The absence of these parameters for the FDP typically indicates slower switching speeds, better suited for lower-frequency or linear applications.