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Original Part

Optoisolator Transistor with Base Output 5000Vrms 1 Channel 8-DIP

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Alternative Part

Optoisolator Transistor with Base Output 5000Vrms 1 Channel 8-DIP

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1. 6N136VG Substitution Conclusion Based on a comparison of core electrical parameters and package specifications, the 6N136VG can serve as a direct replacement for the 6N136M-V. However, attention must be paid to potential application risks arising from its unspecified dynamic performance parameters. Both devices are identical in all key specifications: single-channel, 5000Vrms isolation voltage, a current transfer ratio (CTR@16mA) ranging from 19% to 50%, a maximum output current of 8mA, a forward voltage of 1.45V, and the same 8-DIP package. The primary difference lies in the fact that the 6N136VG does not provide typical values for its switching times (Turn On/Off Time), whereas the original part explicitly specifies typical values of 350ns (turn-on) and 300ns (turn-off). In high-frequency applications or those with stringent timing requirements—such as high-speed switching circuits or pulse signal isolation—the actual response speed of the substitute component may introduce uncertainty. If the circuit design relies on the original part's specified switching speed, verification through actual measurement is necessary. For applications insensitive to switching speed, such as DC or low-frequency signal isolation, the two parts can be considered equivalent replacements.
Analysis ID: 58B8-BAF1000
Based on part parameters and for reference only. Not to be used for procurement or production.
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