Original Part
Bipolar (BJT) Transistor NPN 50 V 2 A 150MHz 500 mW Surface Mount PCP
Alternative Part
Bipolar (BJT) Transistor NPN 60 V 2 A 210MHz 2 W Surface Mount MPT3
Substitution Feasibility Conclusion
In most applications, the 2SD2391T100Q can directly replace the 2SD1623T-TD-E with improved performance, though thermal design and cost must be evaluated.
Comparison Points
1. Power Dissipation Capability: The 2SD2391T100Q offers a 2W power dissipation rating, which is four times that of the 2SD1623T-TD-E (0.5W). This enables the former to handle greater thermal losses, making it suitable for higher-power or more demanding thermal environments.
2. Saturation Voltage: The Vce(sat) of the 2SD2391T100Q is 350mV compared to 400mV. The lower value indicates reduced conduction loss and heat generation in the on-state, contributing to higher efficiency.
3. DC Gain Test Conditions: The 2SD2391T100Q specifies a minimum hFE of 120 tested at 500mA, whereas the 2SD1623T-TD-E is tested at 100mA. This suggests the former maintains better gain linearity in high-current operating regions and offers superior drive characteristics.
4. Transition Frequency: With an f_T of 210MHz versus 150MHz, the higher transition frequency of the 2SD2391T100Q provides improved response speed and greater bandwidth potential in high-frequency switching or amplification applications.
Analysis ID: B15F-911E000
Based on part parameters and for reference only. Not to be used for procurement or production.
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