1. Reverse Leakage Current (Ir @ Vr): The STPS20S100CT specifies 3.5 µA, while the MBR20100CT is rated at 100 µA (both measured at 100V). Under high-temperature and high-voltage operating conditions, the MBR20100CT will generate significantly higher static power dissipation and thermal loss, potentially leading to reduced system efficiency and increased temperature rise. 2. Junction Temperature Range (Tj): The STPS20S100CT has a Tj max of 175°C, compared to 150°C for the MBR20100CT. This directly limits the latter’s thermal design margin and long-term reliability in harsh high-temperature environments, necessitating more rigorous system thermal management. 3. Core Technology Positioning: The MBR20100CT belongs to onsemi’s SWITCHMODE™ series, optimized for switching power supplies, which may involve trade-offs in high-frequency dynamic characteristics. The ST part does not indicate a special series and may employ a process more focused on minimizing leakage current. This reflects a difference in design emphasis: the former likely prioritizes cost-performance and dynamic performance, while the latter emphasizes low-loss operation at elevated temperatures.