1. Current Capability The MBR2060CT‑G is rated for 20 A per diode, whereas the SBR2060CT is rated for only 10 A. Under identical operating conditions, the SBR2060CT must be derated or used in lower‑power circuits. A direct replacement could lead to thermal overstress and failure. 2. Forward Voltage Drop (Vf) and Efficiency The SBR2060CT exhibits a Vf of 700 mV at 10 A, significantly lower than the 950 mV at 20 A of the MBR2060CT‑G. This gives the SBR an advantage in conduction loss and temperature rise, contributing to higher system efficiency, particularly in medium‑current applications. 3. Reverse Recovery Characteristics The MBR2060CT‑G is a fast‑recovery diode (≤500 ns), while the SBR2060CT is a standard‑recovery type (>500 ns). The former is more suitable for high‑frequency switching applications such as SMPS; the latter performs more stably in low‑frequency or DC circuits. Direct substitution in a switching power supply could adversely affect EMI and efficiency. 4. Reverse Leakage Current (Ir) and High‑Temperature Stability The SBR2060CT shows higher Ir (500 µA at 60 V) compared to the MBR2060CT‑G (100 µA at 60 V). However, thanks to its Super Barrier Rectifier technology, its leakage current increases more gradually with temperature. In high‑temperature environments, the SBR may offer better stability, though static power dissipation must be considered. 5. Technology Path and Cost The SBR (Super Barrier Rectifier) represents an evolution of Schottky technology, balancing low Vf with high reliability, but at a higher cost ($1.34 vs. $0.55). If system requirements prioritize efficiency and high‑temperature performance, the cost premium may be justified; otherwise, the MBR solution remains more economical.