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Original Part

CMOS Amplifier 2 Circuit 8-SOIC

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Alternative Part

CMOS Amplifier 2 Circuit 8-SOIC

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CMOS Amplifier 2 Circuit 8-SO

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TS272AIDT Substitution Conclusion The TS272AIDT serves as a direct, performance-equivalent substitute with several superior parameters. The key differences are: lower quiescent current (1mA vs. 1.9mA per channel) resulting in reduced power consumption, beneficial for battery-powered applications; a higher gain-bandwidth product (3.5MHz vs. 2.2MHz) and a slightly higher slew rate (5.5V/µs vs. 5.3V/µs), providing improved high-frequency signal handling capability; and a higher output drive current (45mA vs. 30mA), enabling it to drive heavier loads. Its input offset voltage (900µV) remains identical to the original part, offering no improvement in precision. For general-purpose amplification, filtering, or signal conditioning circuits where precision is non-critical but power consumption and bandwidth are prioritized, this device is a viable substitute. TS272BIDT Substitution Conclusion The TS272BIDT represents a high-feasibility, performance-upgrade replacement compared to the original part. It retains all advantages of the TS272AIDT (lower power, higher bandwidth and slew rate, stronger output drive), while introducing the most critical technical improvement: a significantly reduced input offset voltage (250µV vs. 900µV). This delivers a fundamental enhancement in DC precision and signal conditioning accuracy, effectively minimizing system error. For applications demanding both good dynamic performance and DC accuracy—such as precision sensor amplification, active filtering, or test and measurement equipment—the TS272BIDT is not merely a feasible substitute, but a direct performance upgrade.
Analysis ID: 4978-9E9B000
Based on part parameters and for reference only. Not to be used for procurement or production.
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