1. Maximum Power Dissipation (Power - Max) - DP0150BLP4-7: 450 mW - 2SA2154CT-GR,L3F: 100 mW - The Diodes component offers significantly better thermal capability, supporting higher power or more demanding thermal environments. The Toshiba device is suitable only for very low-power applications. If directly substituted, ensure actual power dissipation is well below 100 mW with sufficient margin; otherwise, the risk of overheating increases substantially. 2. Operating Temperature Range - DP0150BLP4-7: -55°C to 150°C - 2SA2154CT-GR,L3F: Only 150°C (TJ) specified; minimum temperature is undefined. - The Diodes device explicitly supports military/industrial-grade wide-temperature applications. The Toshiba component likely guarantees only high-temperature performance, with undefined low-temperature characteristics. In low-temperature environments (e.g., below 0°C), this may cause parameter drift or functional failure. 3. Implied High-Frequency Performance & Parasitic Parameters - Both specify a Transition Frequency of 80 MHz, but different packages (X2-DFN1006-3 vs. CST3) result in differences in parasitic inductance and thermal resistance. - In high-speed switching or high-frequency amplification circuits, package-induced parasitic effects may impact stability, gain, or switching losses. Verification based on actual circuit frequency is required. Note: The significant price difference likely reflects variations in process technology, thermal performance, and quality control standards. In applications with high reliability requirements, a comprehensive trade-off is necessary.