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Original Part

SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 48-CABGA (9x9)

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Alternative Part

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)

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IS64WV25616EDBLL-10BLA3-TR Substitution Assessment From a core electrical and functional standpoint, the ISSI IS64WV25616EDBLL-10BLA3-TR is a functional substitute for the Renesas 71V416S15BEGI8. Both devices share identical key specifications: capacity (4Mbit), organization (256K x 16), interface (Parallel), and package type (48-TFBGA). Furthermore, the substitute offers superior key performance with a 10ns access time compared to the original's 15ns. Its operating voltage range (2.4V to 3.6V) also fully encompasses the original's requirement (3V to 3.6V). Consequently, it can perform the same or better logical functions within the target system. The primary barrier to direct substitution is physical package incompatibility. The original part uses a 48-CABGA package (9x9 mm), while the substitute is a 48-TFBGA (6x8 mm). The differing ball map and package footprint preclude a drop-in replacement on an existing PCB. Conclusion: For a new design, this higher-performance, wider-voltage-range component is a viable and recommended option. For a direct material replacement in an existing product, it is not feasible and would necessitate a PCB layout redesign. Prior to any implementation, a thorough verification of parameters not explicitly detailed in this summary is essential. This includes confirming full compatibility of power consumption, operational timing waveforms, deep power-down modes, and other critical characteristics with the specific system requirements.
Analysis ID: 23BE-D2EE000
Based on part parameters and for reference only. Not to be used for procurement or production.
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