Original Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-MiniBGA (8x10)
Alternative Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 48-TFBGA (6x8)
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
1. IS62WV25616BLL-55BLI-TR Substitution Conclusion
The IS62WV25616BLL-55BLI-TR matches the original AS7C34098A-10BINTR in memory density (4Mbit), organization (256K x 16), and package type (48-TFBGA). However, key deviations include a significantly longer access time (increased from 10 ns to 55 ns), a wider supply voltage range (2.5V–3.6V vs. 3.0V–3.6V), and a reduced package footprint (6x8 mm vs. 8x10 mm). While the broader voltage range improves power supply compatibility, the slower speed makes this device unsuitable for high-performance applications. Additionally, differences in package dimensions and pinout may create mechanical or layout incompatibilities. Therefore, direct substitution is not recommended unless the system has relaxed timing requirements and the PCB can accommodate the new package.
2. IS61WV25616BLL-10BLI-TR Substitution Conclusion
The IS61WV25616BLL-10BLI-TR aligns with the original AS7C34098A-10BINTR in core memory parameters (4Mbit, 256K x 16) and access time (10 ns). Variations include an extended supply voltage range (2.4V–3.6V vs. 3.0V–3.6V) and a smaller package footprint (6x8 mm vs. 8x10 mm). This device offers a performance-equivalent replacement, and its wider voltage range provides greater design flexibility. However, the difference in package size may lead to pinout or PCB layout mismatches. Prior to substitution, verify pin compatibility; if the pinout is identical, it can be considered a viable drop-in replacement. Otherwise, a PCB redesign will be necessary.
Analysis ID: D2EC-F4F4000
Based on part parameters and for reference only. Not to be used for procurement or production.
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