1. Dynamic Impedance (Zzt): The CMDZ5236B (6Ω) is significantly lower than that of the BZX384C7V5 (15Ω). Under identical operating current variations, the CMDZ5236B exhibits superior regulation characteristics with smaller voltage fluctuations. This makes it particularly suitable for applications with large load changes or those sensitive to power supply noise. 2. Rated Power Dissipation: The CMDZ5236B (250mW) offers a 25% higher rating than the BZX384C7V5 (200mW). In high-temperature or thermally constrained environments, the former provides greater power margin and enhanced long-term reliability. 3. Leakage Current: The CMDZ5236B's leakage current at 6V (3µA) is higher than the BZX384C7V5's at 5V (1µA). When normalized to the same test voltage, this performance gap may widen further, indicating that the BZX384C7V5 has superior reverse-blocking characteristics. This makes it more advantageous for low-power circuit designs. 4. Temperature Range: The CMDZ5236B features a wider junction temperature range (-65°C) compared to the BZX384C7V5 (-55°C), making it suitable for extreme environments such as aerospace applications or automotive cold-start conditions. 5. Forward Voltage Drop: The CMDZ5236B specifies a forward characteristic (Vf=900mV), suggesting it may have undergone more comprehensive characterization testing. This provides clearer parameters for designs involving bidirectional transient protection. Summary of Impact: The CMDZ5236B offers advantages in voltage regulation accuracy, power handling, and low-temperature performance, but exhibits higher leakage current. The BZX384C7V5 is more favorable for low-power designs and typically comes at a significantly lower cost. When considering substitution, validation based on the specific circuit's sensitivity to impedance, leakage current, and temperature is essential.