Original Part
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 mW Surface Mount TO-236AB
Alternative Part
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Substitution Feasibility Conclusion
In the vast majority of general-purpose switching and low-voltage signal amplification applications, the MMUN2213LT1G can serve as a direct replacement for the PDTC144ETVL. However, in critical circuits with stringent optimization requirements for saturation voltage or drive current, verification is necessary.
Comparison Points
1. Vce Saturation Voltage (Vce(sat)): Both the typical value (not listed) and the maximum value (250mV) of the MMUN2213LT1G are higher than those of the PDTC144ETVL (150mV). Under the same base drive current (Ib), the MMUN2213LT1G exhibits a larger voltage drop between collector and emitter when conducting, leading to higher conduction losses and increased heating.
2. DC Current Gain Test Conditions: Both parts share the same minimum hFE value. However, the MMUN2213LT1G is characterized at Vce=10V, while the PDTC144ETVL is tested at Vce=5V. This indicates the MMUN2213LT1G guarantees the same gain at a higher collector-emitter voltage. Its output characteristic curve is likely flatter in the high-Vce region, offering slightly better linearity.
3. Collector Cut-off Current (Ices): The maximum Ices of the MMUN2213LT1G (500nA) is only half that of the PDTC144ETVL (1µA). When the transistor is required to be fully off, the MMUN2213LT1G exhibits lower leakage current through the collector-emitter path. This is beneficial for reducing system standby power consumption or improving voltage retention accuracy at high-impedance nodes.
Analysis ID: 064B-09C0000
Based on part parameters and for reference only. Not to be used for procurement or production.
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