Original Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)
Alternative Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 48-CABGA (9x9)
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)
1. Substitution Conclusion for 71V416L15BEG8
When considering the 71V416L15BEG8 as a replacement for the original IS61WV25616BLL-10BI-TR, careful evaluation is required due to two key technical differences. First, the access time increases from 10 ns to 15 ns, which may slow down system timing and could lead to performance degradation or timing violations in applications requiring fast response. Second, the supply voltage range narrows from 2.4V–3.6V to 3V–3.6V, limiting its use in low-voltage systems (below 3V) and potentially causing compatibility issues. Substitution may be considered only if the target application is not sensitive to access time and operates consistently above 3V; otherwise, direct replacement is not recommended.
2. Substitution Conclusion for 71V416L10BE
The 71V416L10BE presents a higher feasibility as a replacement for the original IS61WV25616BLL-10BI-TR, with one notable difference: the supply voltage range shifts from 2.4V–3.6V to 3V–3.6V. If the system voltage falls below 3V (e.g., 2.5V or 2.8V), this device will not operate correctly, potentially causing circuit failure. However, the access time remains 10 ns, ensuring performance consistency. Provided the system voltage is maintained above 3V, this part can be considered a direct replacement; otherwise, redesign of the power supply section or selection of an alternative compatible device is necessary.
Analysis ID: F933-6282000
Based on part parameters and for reference only. Not to be used for procurement or production.
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