1. Rated Current (Io): VB60100C is rated at 30A (per device), while NRVBB20100CTT4G is rated at 10A (per device). The latter’s continuous and surge current capability is only one-third of the former. Substituting under the same operating conditions would expose the NRVBB to severe overheating and failure risks. Actual operating current must be verified to be well below 10A. 2. Forward Voltage Drop (Vf): VB60100C is 790mV @ 30A; NRVBB is 850mV @ 10A. Vf is the key parameter determining conduction loss. Although test conditions differ, combined with its TMBS® technology, the VB60100C typically delivers lower conduction loss and higher efficiency in high-current operation. Losses in the NRVBB increase sharply as current approaches 10A. 3. Reverse Leakage Current (Ir): VB60100C is 1mA @ 100V; NRVBB is 100µA @ 100V. The NRVBB’s leakage is an order of magnitude lower, offering advantages in static power dissipation and thermal management under high-temperature conditions. However, for most power supply applications, 1mA leakage is generally acceptable. 4. Technology Positioning & Cost: VB60100C belongs to Vishay’s TMBS® (Trench MOS Barrier Schottky) series, optimized for extremely low Vf and suited for high-efficiency, high-power-density designs. NRVBB is part of onsemi’s SWITCHMODE™ series, tailored for general-purpose switching power supplies. The nearly twofold price difference reflects the performance gap (current capability, Vf) and underlying technology. 5. Package Thermal Resistance (Implicit Difference): Although both use D2PAK packages, differences in die size, internal structure, and lead frame design result in different junction-to-ambient thermal resistance (RθJA). The 30A device inherently offers superior thermal performance compared to the 10A device. Direct substitution alters the system’s thermal equilibrium, necessitating a reassessment of the heatsinking design.