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Original Part

N-Channel 500 V 5.4A (Tc) 28W (Tc) Through Hole PG-TO220-3-FP

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Alternative Part

N-Channel 500 V 12A (Ta) 45W (Tc) Through Hole TO-220SIS

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Substitution Feasibility Conclusion

The TK12A50D can serve as a substitute in applications where the voltage rating matches but current demand is relatively low (≤5A) and switching performance is not the primary concern, provided that drive circuitry, thermal management, and cost are re-evaluated. If the application is sensitive to high-frequency switching or cost, the necessity for substitution is reduced.

Comparison Points

1. Current Rating & Test Conditions - IPA50R500CE: Id = 5.4A (Tc = 25°C, case temperature based) - TK12A50D: Id = 12A (Ta = 25°C, ambient temperature based) - Although Toshiba’s rated current appears higher, its ambient temperature test condition is more stringent. Under identical thermal conditions, the actual current capability difference may narrow. Current margin should be verified based on the actual thermal design. 2. On-Resistance & Test Current - IPA50R500CE: Rds(on) = 500 mΩ @ 2.3A, 13V - TK12A50D: Rds(on) = 520 mΩ @ 6A, 10V - Infineon’s device is characterized at lower current, while Toshiba’s is tested at higher current, suggesting Toshiba’s part may offer better conduction performance at higher current levels. However, given the close Rds(on) values, conduction loss difference at medium-to-low currents is likely negligible. 3. Dynamic Performance - IPA50R500CE: Qg = 18.7 nC, Ciss = 433 pF - TK12A50D: Qg = 25 nC, Ciss = 1350 pF - The Infineon device exhibits significantly lower gate charge and input capacitance, enabling faster switching and lower drive loss, making it more suitable for high-frequency applications (e.g., switching power supplies). The Toshiba part requires stronger drive capability and incurs higher switching losses. 4. Thermal Design Compatibility - IPA50R500CE: Pd = 28W (TO-220-FP package) - TK12A50D: Pd = 45W (TO-220SIS package) - Toshiba specifies higher power dissipation, but the package thermal structure differs (TO-220SIS typically incorporates a larger heatsink tab). Heatsink compatibility and thermal resistance must be reassessed during substitution. 5. Drive Voltage & Compatibility - IPA50R500CE: Vgs(max) = ±20V, recommended Vgs = 13V - TK12A50D: Vgs(max) = ±30V, recommended Vgs = 10V - The Toshiba device offers a wider Vgs range, but attention must be paid to whether the existing gate drive circuit can adapt to the recommended 10V, to avoid increased Rds(on) due to lower drive voltage. Recommendation: If the original design leverages Infineon’s low Qg advantage for high-frequency switching, substitution may compromise efficiency and thermal performance. If the application operates at lower frequency or higher current, and the drive voltage can be adjusted, the Toshiba part may provide higher current margin, but thermal performance must be validated and cost increase considered.
Analysis ID: 0C72-6354000
Based on part parameters and for reference only. Not to be used for procurement or production.
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