Original Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 8 ns 48-TFBGA (6x8)

Alternative Part
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-TFBGA (6x8)

1. IS61WV25616EDBLL-10BLI Substitution Conclusion
From a technical parameter comparison, the IS61WV25616EDBLL-10BLI is a pin-compatible direct replacement for the original IS61WV25616EDBLL-8BLI. However, this substitution constitutes a "speed-downgrade, wider-voltage" replacement, and its feasibility is highly dependent on the original system's timing and voltage tolerance margins.
There are two key differences. First, the access time and write cycle time have been downgraded from 8ns to 10ns, meaning the memory's absolute speed is slower. If the original system design lacks sufficient timing margin, direct replacement could lead to timing violations or data errors during high-speed read/write operations. Second, the operating voltage range has been widened from 3.0V~3.6V to 2.4V~3.6V. The newer device offers greater power supply voltage adaptability, providing an advantage in scenarios like battery-powered applications where voltage may fluctuate. For an original design operating stably at 3.3V, this difference typically does not pose a replacement obstacle.
This substitution is viable in systems where the clock frequency is not high, sufficient timing margin exists, or where low-voltage compatibility is required. Conversely, if the system operates at its maximum frequency limit, direct replacement is not recommended.
Analysis ID: 76A1-834E000
Based on part parameters and for reference only. Not to be used for procurement or production.
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