1. Conduction Loss & Current Capability: The DMTH4005SK3Q-13 features a lower Rds(on) (4.5 mΩ) compared to the IPD90N04S405ATMA1 (5.2 mΩ), along with a higher rated continuous current (95A vs. 86A). Under the same current conditions, the DMTH exhibits lower conduction loss and reduced heating, making it more suitable for continuous high-current scenarios. 2. Switching Performance: The IPD90N04S405ATMA1 has a significantly lower gate charge (Qg = 37 nC) than the DMTH (49.1 nC). Combined with its slightly lower input capacitance, this indicates faster switching speed and lower drive loss, giving it an efficiency advantage in high-frequency switching applications such as DC-DC converters. 3. Thermal Design Margin: The DMTH specifies two power dissipation ratings (2.1W at Ta / 100W at Tc), whereas Infineon only specifies 65W at Tc. This suggests the DMTH may allow higher transient power dissipation under good thermal coupling, though actual thermal design should refer to the junction-to-case thermal resistance (RthJC) parameter. 4. Technology Platform: The IPD90N04S405ATMA1 utilizes Infineon’s OptiMOS™ technology, typically optimized for switching performance. The DMTH does not specify a particular technology and may be more focused on a balanced low on-resistance. Note: Before substitution, verify actual operating conditions—if the application emphasizes static conduction loss, the DMTH is preferable; if switching frequency or dynamic performance is critical, the IPD90N04S405ATMA1 may be more suitable. Both devices are AEC-Q101 qualified.