1. Rds(On) Test Current: The GE3 is specified `@ 7.4A`, while the BE3 is specified `@ 7.1A`. This difference only reflects the specific test point current used for verifying the on-state resistance. Both parts share the same maximum Rds(On) rating of 21mΩ. This means that under 10V Vgs drive, their conduction loss performance is specified identically. The variation is purely in the datasheet characterization method and has no practical performance impact. 2. Input Capacitance (Ciss) Test Voltage: The GE3 is measured `@ 25 V`, whereas the BE3 is measured `@ 50 V`. The junction capacitance of a MOSFET decreases with increasing Vds voltage. This difference indicates the BE3 data was taken at a higher drain-source voltage. Its capacitance value (978 pF) is on par with the GE3 value (979 pF) measured at a lower voltage, practically reflecting equivalent or slightly superior capacitance characteristics. This typically suggests the BE3 may employ a more optimized test characterization; its high-frequency switching performance is equivalent to or marginally better than the GE3. Summary: There is no fundamental difference between the two parts in key performance metrics (Vdss, Id, Rds(on), Qg, package, and qualifications). The noted variations exist only in the description of test conditions within the datasheet and do not affect device selection or application. They can be considered direct substitutes.