Original Part
Alternative Part
1. TSV852IYST Substitution Conclusion
The TSV852IYST is highly compatible with the original LMV358QDGKR in terms of fundamental architecture, channel count, output type, supply voltage range, and package footprint, making it a viable direct replacement option. Key parametric differences are noted: its input offset voltage (4 mV vs. 1.7 mV) and input bias current (27 nA vs. 15 nA) are moderately higher, which may introduce slightly greater error in applications demanding high DC precision. The slew rate is also lower (0.7 V/µs vs. 1 V/µs), potentially affecting large-signal high-frequency response speed.
However, the TSV852IYST offers several performance advantages. Its gain bandwidth product is marginally better (1.3 MHz vs. 1 MHz). More significantly, its quiescent current is substantially lower (130 µA vs. 210 µA per channel), contributing to reduced system power consumption. Furthermore, it provides stronger output drive capability (70 mA vs. 40 mA) and carries AEC-Q100 automotive-grade qualification, enhancing its suitability for high-reliability or power-sensitive upgrade scenarios.
In summary, for circuits with general precision and speed requirements, the TSV852IYST represents a feasible alternative that offers superior performance in several key areas.
2. BU7266FVM-TR Substitution Conclusion
The BU7266FVM-TR exhibits fundamental differences in critical dynamic performance compared to the original LMV358QDGKR, rendering it unsuitable for direct substitution. Its gain bandwidth product is only 4 kHz (versus 1 MHz for the original), and its slew rate is extremely low (0.0024 V/µs vs. 1 V/µs). Consequently, this device is completely incapable of processing any mid-to-high frequency signals, suffering from severely limited bandwidth and exceedingly slow large-signal response.
While the BU7266FVM-TR excels in parameters such as input bias current (1 pA vs. 15 nA), quiescent current (700 nA vs. 210 µA), and input offset voltage (1 mV), and supports a wider low-voltage operating range (down to 1.8 V), these advantages are only relevant for highly specific applications. These include ultra-low-power, pure DC, or extremely low-frequency circuits, such as sensor signal conditioning or long-term monitoring systems.
Therefore, unless the application circuit has extreme requirements for power consumption and DC precision with absolutely no concern for bandwidth and speed, the BU7266FVM-TR cannot serve as a substitute for the original part.
Analysis ID: 546B-BB66000
Based on part parameters and for reference only. Not to be used for procurement or production.
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