1. Forward Voltage Drop (Vf): The MBRF20H150CTG features a Vf of 680mV, significantly lower than the 920mV of the STPS20150CFP. At an identical 10A current, this results in approximately 26% lower conduction loss for the Onsemi device, improving system efficiency and reducing thermal dissipation. 2. Reverse Leakage Current (Ir): The leakage current of the MBRF20H150CTG (50µA) is ten times that of the STPS20150CFP (5µA). Under high-temperature or high-voltage conditions, the static power loss of the Onsemi component may be higher, posing a minor impact on thermal management and off-state precision. 3. Junction Temperature Range: The STPS20150CFP has a maximum junction temperature (Tj) of 175°C, exceeding the 150°C rating of the MBRF20H150CTG. The ST device offers greater thermal margin during overload or inadequate heat dissipation, making it more suitable for applications with harsher ambient temperatures. 4. Technology Series: The MBRF20H150CTG belongs to the SWITCHMODE™ optimized series, implying its dynamic characteristics (e.g., reverse recovery charge) are likely tuned for switched-mode power supplies. In contrast, the STPS series follows a general-purpose design. In practical high-frequency switching applications, the Onsemi device may demonstrate lower switching losses.