1. Breakdown Voltage and Saturation Voltage: The NSV60200LT1G offers a Vceo of 60V, higher than the PBSS5350TVL’s 50V, providing greater voltage margin. Its key advantage lies in a lower saturation voltage of 220mV (@2A), significantly below the latter’s 390mV (test conditions differ, but the trend is clear). At the same current, the former exhibits lower conduction loss and reduced heating, making it particularly suitable for efficiency-sensitive applications such as switching power supplies. 2. DC Gain and Test Conditions: The PBSS5350TVL specifies a minimum hFE of 200 (@1A, 2V), higher than the NSV60200LT1G’s 150 (@500mA, 2V). This difference may allow the former to deliver higher load current or be easier to drive under the same base current. Reevaluation of base drive capability is recommended when substituting. 3. Power Dissipation and Thermal Performance: The NSV60200LT1G clearly specifies a maximum power dissipation of 460mW, whereas the PBSS5350TVL does not provide a direct rating (typical SOT-23 is around 350mW). This suggests the former may have superior package thermal performance or die design, permitting higher continuous dissipation, though actual application will still be limited by PCB thermal design. 4. Temperature Range and Reliability: The NSV60200LT1G explicitly supports a full industrial temperature range of –55°C to 150°C, while the PBSS5350TVL only indicates a maximum junction temperature of 150°C. The former is better suited for harsh environments such as automotive or industrial applications, implying potentially stricter manufacturing processes and reliability validation.