1. Rated Current and Forward Voltage Drop (Io & Vf): The MURA140T3G has a rated current (2A) twice that of the ES1G-LTP (1A). Furthermore, its forward voltage drop (1.1V) at the 1A test condition is significantly lower than the ES1G-LTP's 1.25V. At the same operating current, the MURA140T3G exhibits lower conduction loss and temperature rise, leading to higher system efficiency, improved reliability, and greater design margin. 2. Reverse Recovery Time (trr): The trr of the ES1G-LTP (35ns) is considerably shorter than that of the MURA140T3G (65ns). This indicates that the ES1G-LTP switches faster, generating less charge (Qrr) and lower peak current (Irm) during the reverse recovery process at turn-off. In high-frequency switching circuits (e.g., SMPS PFC stages, flyback clamp circuits), this directly translates to lower switching losses, reduced EMI noise, and less diode turn-off stress. 3. Performance Focus and Price: Considering the above points, the ES1G-LTP is a standard fast recovery diode more specialized for optimized switching performance, whereas the MURA140T3G is a variant more focused on enhanced current-handling capability and reduced conduction loss. The approximate 70% price difference between the two primarily reflects their differing emphasis on die area (for current capability) and process technology (for trr performance).