1. Forward Voltage (Vf): The SL26PL‑TP has a typical Vf of 550 mV, while the NRVTS2H60ESFT1G exhibits 650 mV (both measured at 2 A). At the same operating current, the Onsemi device will have higher conduction loss and greater heat generation, resulting in slightly lower system efficiency. 2. Reverse Leakage Current (Ir): The SL26PL‑TP shows 500 µA of reverse leakage at 60 V, compared to only 12 µA for the NRVTS2H60ESFT1G under the same condition. The significantly lower leakage of the Onsemi part indicates superior substrate/barrier process technology, leading to much better power dissipation and temperature rise control at high temperature or high voltage. This contributes to improved system reliability under elevated temperature conditions. 3. Operating Temperature and Qualification: The NRVTS2H60ESFT1G offers a wider junction temperature range (–65 °C to 175 °C) and is AEC‑Q101 qualified, confirming that its design, manufacturing, and testing meet automotive‑grade reliability standards. It is therefore suitable for harsh environments such as automotive electronics. In contrast, the SL26PL‑TP is rated only for industrial/commercial‑grade applications.